Wolfspeed / Cree CG2H40xx and CG2H30xx GaN (Gallium Nitride) HEMTs are High Electron Mobility Transistors designed to operate from a 28V rail. The CG2H40xx and CG2H30xx Transistors offer a general purpose broadband solution to a variety of RF and microwave applications. The high efficiency, high gain, and wide bandwidth capabilities of these HEMTs make it ideal for linear and compressed amplifier circuits. The CG2H40xx and CG2H30xx transistors are available in a wide variety of package types for design flexibility, including screw down, solder down, pill, and flange packages. Typical applications include broadband amplifiers, cellular infrastructure, and radar.
Features
High EfficiencyHigh GainWide Bandwidth CapabilitiesRugged Design for Long, Reliable Operation
Specifications
Drain-Source Voltage (V
DSS): 120V @ 25˚CGate-to-Source Voltage (V
GS): -10V to +2VStorage Temperature (T
STG): -65˚C to +150˚COperating Junction Temperature (T
J): 225˚CCase Operating Temperature (T
C): -40˚C to +150˚C
Applications
Broadband AmplifiersCellular InfrastructureRadarTest Instrumentation
