GaN Systems 3rd Generation Insulated Metal Substrate (IMS) Based Evaluation Platforms are high power assemblies available in the half bridge and full bridge variants. The half bridge evaluation assemblies come in a 120A / 13mΩ and 60A / 25mΩ variants. The vertical mounting feature of these half bridge platforms is beneficial in high-power systems more than 5kW. The vertical boards can easily be adapted for horizontal mounting and can be attached to the system heat sink.
Features
IMS Modules are vertical mounted for high power density designVertical space available for transistor mountingOpen loop evaluation platform for IMS kitsFull bridge board can be used for both full bridge and half bridge topology evaluation
Application Notes
Design Considerations of Paralleled GaN HEMT-based Half Bridge Power Stage
